replacement metal gate
由RSingh著作·2022—Inthiswork,weproposeanovelasymmetricfinfield-effecttransistor(FinFET)-basedaccessdevice,alongwithaprocessflow,ata3-nmnode.,由RBao著作·2019·被引用9次—Abstract.Thispaperaddressesnovelapproachesatmaterialandintegrationfrontsforgate...
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2009年12月10日—以Gate-first而言,HK/MG係於閘極成型之前即置入,而Gate-last或稱Replacementmetalgate,金屬閘極則是於多晶矽假閘極成型之後填入,旋即移除假閘 ...
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